Time constant of defect relaxation in ion-irradiated 3C-SiC
نویسندگان
چکیده
منابع مشابه
Divacancy in 3C- and 4H-SiC: An extremely stable defect
Rights: © 2002 American Physical Society (APS). This is the accepted version of the following article: Torpo, L. & Staab, T. E. M. & Nieminen, Risto M. 2002. Divacancy in 3Cand 4H-SiC : An extremely stable defect. Physical Review B. Volume 65, Issue 8. 085202/1-10. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.65.085202, which has been published in final form at http://journals.aps.org/prb...
متن کاملDefect-induced magnetism in neutron irradiated 6H-SiC single crystals.
Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings...
متن کامل3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...
متن کاملSelf-Interstitials in 3C-SiC
We report results from density-functional plane-wave pseudopotential calculations for carbon and silicon self-interstitials in cubic silicon carbide (3CSiC). Several initial ionic configurations are used in the search for the global totalenergy minimum including tetragonal, split [100] and split [110] geometries. Neutral carbon interstitials are found to have several nearly degenerate total-ene...
متن کاملEffects of collision cascade density on radiation defect dynamics in 3C-SiC
Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. We find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing effici...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2015
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4921471